I have been looking for some information on the temperature coefficient of the forward voltage of 1N60P or Germanium Schottky diodes in general.
I have not been able to find any piece of information on either.
The only thing I have found is the temperature coefficient of Germanium diodes, which, is approximately - 2.5mV / C, slightly higher than for Silicon diodes, which, have atypical temperature coefficient of - 2mV / C.
I have also found Silicon Schottky diodes have a lower temperature coefficient of - 1.45mV / C.
In case this is true for Germanium Schottky diode, the expected temperature coefficient is - 2mV / C.
However, the documentation of 1N60P and 1N60 claims for these to have a low temperature coefficients. Maybe, when they say low, they mean much lower than standard, Silicon diodes. This may mean the temperature coefficient of 1N60P and 1N60 is around - 1mV / C to - 1.25mV / C. This is just a speculation without any data.
Thus, please, help : does anyone knows the temperature coefficient of the forward voltage of 1N60P, 1N60 or Germanium Schottky diodes or transistors in general.
Please, help!
I have not been able to find any piece of information on either.
The only thing I have found is the temperature coefficient of Germanium diodes, which, is approximately - 2.5mV / C, slightly higher than for Silicon diodes, which, have atypical temperature coefficient of - 2mV / C.
I have also found Silicon Schottky diodes have a lower temperature coefficient of - 1.45mV / C.
In case this is true for Germanium Schottky diode, the expected temperature coefficient is - 2mV / C.
However, the documentation of 1N60P and 1N60 claims for these to have a low temperature coefficients. Maybe, when they say low, they mean much lower than standard, Silicon diodes. This may mean the temperature coefficient of 1N60P and 1N60 is around - 1mV / C to - 1.25mV / C. This is just a speculation without any data.
Thus, please, help : does anyone knows the temperature coefficient of the forward voltage of 1N60P, 1N60 or Germanium Schottky diodes or transistors in general.
Please, help!
I do not believe that germanium transistors have a low temperature coefficient of 1mv/C .
Having investigated this round the web I ended up on a website for nuclear physicists who were debating the theoretical theory of temperature effects on germanium and the changes in molecular structure due to this.
I am afraid I could not evaluate the theories presented as the calculus was beyond basic university mathematics involving nuclei at base level .
The outcome wasn't decisive and the theory they ended up with wasn't a scientific proven fact .
OTOH ---- another website for guitarists was talking about "Fuzz Pedals " activated by geranium and a comment was-
"professionals before a big gig put their pedals in a fridge to drop the level of temperature as it produced a "clearer sound " ??
Nobody has replied to you so far ,I hope my post will engender a fully proven scientific answer now?
Having investigated this round the web I ended up on a website for nuclear physicists who were debating the theoretical theory of temperature effects on germanium and the changes in molecular structure due to this.
I am afraid I could not evaluate the theories presented as the calculus was beyond basic university mathematics involving nuclei at base level .
The outcome wasn't decisive and the theory they ended up with wasn't a scientific proven fact .
OTOH ---- another website for guitarists was talking about "Fuzz Pedals " activated by geranium and a comment was-
"professionals before a big gig put their pedals in a fridge to drop the level of temperature as it produced a "clearer sound " ??
Nobody has replied to you so far ,I hope my post will engender a fully proven scientific answer now?
Thanks. I do not think anyone would know the temperature coefficient of the forward voltage of 1N60 and 1N60P, exactly, as, there is no data and measurements have to be carried out.
I hoped someone would know the temperature coefficient of Germanium Schottky diodes.
Also, I would be happy in case anyone can confirm the simplest : The temperature coefficient of Germanium diodes and transistors ( - 2.5mV/C ) and the temperature of Silicon Schottky diodes ( - 1.45mV/C ).
I hoped someone would know the temperature coefficient of Germanium Schottky diodes.
Also, I would be happy in case anyone can confirm the simplest : The temperature coefficient of Germanium diodes and transistors ( - 2.5mV/C ) and the temperature of Silicon Schottky diodes ( - 1.45mV/C ).
The forward voltage drop of a 1N60P is around .24 volts with a temperature coefficient of 1.45 mV per degree.
The voltage drop of a 1N60 is around .32 volts with a temperature coefficient of 2.5 mV per degree.
Many DVMs have a diode test function to show the forward voltage drop. Water boils at close to 100 degrees C. So dunking a 1N60P in boiling water will lower the forward voltage drop to about .14 volts. A 1N60 will drop to about the same.
The voltage drop of a 1N60 is around .32 volts with a temperature coefficient of 2.5 mV per degree.
Many DVMs have a diode test function to show the forward voltage drop. Water boils at close to 100 degrees C. So dunking a 1N60P in boiling water will lower the forward voltage drop to about .14 volts. A 1N60 will drop to about the same.
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Germanium devices are not usually spec'd to handle 100C, so the boiling water test isn't advised - the 1N60P for instance is rated upto 75C absolute maximum.
1N60P from virtually all manufacturers is rated for 125C.
I will see what testing at 100C actually does to a germanium diode diode.
I will see what testing at 100C actually does to a germanium diode diode.
Sold as 1N60 .27 V forward drop at 23 C, .186 in microwaved water. 1N51 .382 at 23C and .23 in boiling water.
Conclusion 1N60 was really a silicon schottky diode. Neither really showed expected temperature coefficient.
Conclusion 1N60 was really a silicon schottky diode. Neither really showed expected temperature coefficient.
The forward characteristics graph in the lower right corner of the first page may be of interest. The datasheet is from a Hitachi databook published in 1977.
Really? If its germanium it cannot work at 125C as its effectively a metal at those temperatures.
https://www.futurlec.com/Diodes/1N60P.shtml
Perhaps you are looking at Si Schottky replacements sold as 1N60P's ?
Strange virtually all of the data sheets say a 1N60P is a silicon Schottky diode. I only find the one you cited that claims it to be germanium.
I think germanium diodes were replaced by Schottky's for various purposes - same low forward voltage (and the high leakage current and low temperature requirements of Schottky's aren't really a downgrade from Ge). And yes Schottky's can be used at 125C but you don't actually do that because of the rapid rise of leakage with temperature.
Normally the “P” suffix would mean “Prototype.”
The other use would be manufacturer, clearly not the case here.
The other use would be manufacturer, clearly not the case here.
I was able to dig this datasheet up, and it mentions the 1N60P. Oddly enough, I have no "ancient" datasheets of the 1N60 - you only get a single line entry in a table of parts with forward voltage, leakage, current ratings, etc. Hope it helps!
Attached are the best datasheets, I have found, of 1N60 and 1N60P. 1N60 is a low current diode and have higher Uf at a given If, compared to 1N60P. However, 1N60 has extremely low capacitance and is extremely fast. In most cases, I am interested in 1N60P, although,1N60 is, still, very useful.
The Japanese manual, which giver the dependance of Uf ( If ) at T, is for the low power 1N60. I would be happy to see a similar graphics for 1N60P. Most likely, the temperature coefficients are the same at scaled currents.
The Japanese manual, which giver the dependance of Uf ( If ) at T, is for the low power 1N60. I would be happy to see a similar graphics for 1N60P. Most likely, the temperature coefficients are the same at scaled currents.
