MOSFET VS Bipolar in Class AB

Far higher current gain, no second breakdown if you use the right MOSFET types (modern switching MOSFETs often have Spirito instability, which is a kind of thermal second breakdown). Compared to epitaxial base bipolar power transistors: higher fT.
 
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I suppose there are the more desirable MOSFETs -- especially having a lower threshold.

I got one designed in simulation but headroom limitation in truly sad and took some real effort to get a good bias technique going well
 
Good article

I am using current sensing on one side when it is off the adjust bias for mosfet and works.

If power stage is open loop then i suppose you get more tube-like clipping as a possible benefit for guitar
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Read my article on Class AB Biasing.

From the point of view of distortion in class AB, BJTs are better. This is because the Vbe of a BJT changes much less with Ic than a MOSFETs' Vgs changes with Id. In each case, the relationship is non-linear.

When you use them in one very specific topology. There is no law stating that output transistors have to be connected as complementary emitter followers or complementary source followers and that they have to be driven from a low (open-loop) impedance.
 
When you use them in one very specific topology. There is no law stating that output transistors have to be connected as complementary emitter followers or complementary source followers and that they have to be driven from a low (open-loop) impedance.
Of course, but emitter followers and source followers are the most commonly-used topologies for the output stage.
This one is fast -- just a question of how much bias ripple - a matter of sizing C1
Making the feedback loop fast enough for audio frequencies will result in the output transistors running in class A.
Ed
 
Of course, but emitter followers and source followers are the most commonly-used topologies for the output stage.

Indeed. If you had written 'For a class-AB complementary emitter or source follower topology driven from a low open-loop impedance, BJTs are better from the point of view of distortion', I would have agreed, but the way you phased it in post #4, it could be mistaken for a topology-independent conclusion - if someone would read it without looking at the link, that is.
 
Indeed. If you had written 'For a class-AB complementary emitter or source follower topology driven from a low open-loop impedance, BJTs are better from the point of view of distortion', I would have agreed, but the way you phased it in post #4, it could be mistaken for a topology-independent conclusion - if someone would read it without looking at the link, that is.
I think we are nit-picking. The context is the OP's circuit, a source follower.

It runs AB -- has very graceful overlap near zero crossing.
Okay, I see why: the sensing is shut off during positive halves. That assumes the load is not reactive.
Ed